Device including a resistive path to introduce an equivalent RC circuit

ABSTRACT

Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.

FIELD OF THE INVENTION

[0001] The present invention relates generally to transistor devicesand, more particularly, to low power and ultra-low power MOS devices.

BACKGROUND OF THE INVENTION

[0002] In modern computer systems, power density and scalability issuesrepresent some of the most significant obstacles to increased systemperformance. For reliability, the supply voltage Vdd must come down andthe threshold voltage must come up. Consequently, performance is beingrapidly squeezed between the two. In addition, with the emergence of anelectronics market that stresses portability, compact size, lightweightand the capability for prolonged remote operation, a demand has arisenfor low power and ultra-low power transistor devices and systems. Tomeet this demand devices are emerging which have extremely low thresholdvoltages.

[0003] There are a number of factors that contribute to the magnitude ofa device's threshold voltage. For example, to set a device's thresholdvoltage near zero, light doping and/or counter doping in the channelregion of the device may be provided. However, due to processingvariations, the exact dopant concentration in the channel region canvary slightly from device to device. Although these variations may beslight, they can shift a device's threshold voltage by a few tens oreven hundreds of millivolts. Further, dimensional variations, such asoxide thickness, channel width, channel length, charge trapping inmaterials and interfaces, and environmental factors, such as operatingtemperature fluctuations, can shift the threshold voltage.

[0004] Lowering the threshold voltage of a device typically decreasesactive power dissipation by permitting the same performance to beachieved at a lower supply voltage. However, lowering the thresholdvoltage of a device normally increases standby power dissipation byincreasing device leakage and devices having low threshold voltages canleak so much current when their circuits are in a sleep or standby modethat the gains made by lowering the threshold voltage are outweighed bythe power lost to leakage.

[0005] Consequently, it is particularly desirable in low-thresholddevices to provide a mechanism for tuning the threshold voltage toaccount for these and other variations. Tuning the threshold voltage ofa device can be accomplished using back biasing, i.e. controlling thepotential between a device's well and source. See James B. Burr,“Stanford Ultra-Low Power CMOS,” Symposium Record, Hot Chips V, pp.7.4.1-7.4.12, Stanford, Calif. 1993, which is incorporated, in itsentirety, herein by reference. Back-biasing is used to electrically tunethe transistor thresholds by reverse biasing the bulk of each MOStransistor, relative to the source, to adjust the threshold potentials.Typically, the potential will be controlled through isolated contacts tothe source and well regions together with circuitry necessary forindependently controlling the potential of these two regions.

[0006]FIG. 1A illustrates a prior art device 100A in which each of anNFET 101 and a PFET 102 essentially constitutes a four-terminal device.NFET 101 is made up of an N-region source 103, a gate electrode 104, anN-region drain 105, and a P-bulk material 106. Similarly, PFET 102includes P-region source 108, a gate electrode 109 and a P-region drain110 formed in an N well 111. The device of FIG. 1A also includes a Pplug that forms a well tie 112 for P-bulk material 106, and an N plugthat forms a well tie 113 for N-well 111.

[0007] In the back-biased CMOS design of FIG. 1A, well tie 112 of bulkmaterial 106 is electrically isolated from source 103 of NFET 101 byproviding a separate metallic rail contact 116 which is spaced frommetallic rail contact 114 of source 103. Rail contact 116 is coupled toa bias voltage source Vpw. Likewise, well contact 113 of N-well 111 issplit off from source 108 of PFET 102 by providing a separate metallicrail contact 118 that is electrically isolated from metallic railcontact 115 of source 108. Rail contact 118 is coupled to a bias voltagesource Vnw.

[0008] According to the structure of prior art device 100A, thesubstrate bias potential of NFET 101 is set by Vpw, and that of PFET 102is set by Vnw. In other designs, a number of transistors are formed in acommon well. In these designs, the bias potential may be routed within asurface well.

[0009]FIG. 1B illustrates a device 100B similar to device 100A of FIG.1A, except that bulk material 106 of the NFET 101 in FIG. 1B is biasedto Vpw by way of a metallic back plane 119, rather than by way of welltie 116 as shown in FIG. 1A.

[0010]FIG. 1C shows a portion of prior art back biased device 100Aincluding NFET 101. In the discussion below, NFET 101 was chosen forillustrative purposes only. Those of skill in the art will recognizethat PFET 102 could also have been chosen and that the discussion andeffects discussed below would be equally applicable, with the exceptionthat the polarities would be reversed.

[0011] In FIG. 1C, the well-known effect of coupling capacitance betweengate 104 and bulk material 106 is represented by gate-bulk couplingcapacitance 150 and the well known effects of coupling capacitancebetween drain 105 and bulk material 106 is represented by drain-bulkcoupling capacitance 152. Due to gate-bulk coupling capacitance 150,there is a tendency for the voltage of bulk material 106, V-bulk, totrack the voltage on gate 104. As discussed in more detail below, ifthis tracking were allowed, there is a tendency to raise V-bulk anddecrease the threshold voltage of NFET 101 as device 101 turns on, and,as discussed above, lowering the threshold voltage of a device such asNFET 101 has several benefits. However, in the prior art, a significantamount of effort, and virtually all teaching, was directed to keepingV-bulk constant during a switching event and preventing significantchanges in the potential of bulk material 106 during a switching event.To this end, it was taught that bulk material 106 should be the lowestresistance possible and that bulk material 106 should be coupled asdirectly as possible to ground or some other drain-off potential.

[0012] The main reason that the prior art taught keeping V-bulkconstant, and bulk material 106 as low a resistive value as possible, isthat in prior art CMOS designs two problems were always being dealtwith: large impact ionization currents and/or latch up.

[0013] Impact ionization currents are created because the potentials instandard CMOS devices are high, on the order of 1.5 to 5.0 volts. Atthese potentials, charge carriers acquire so much kinetic energy thatthe impact of the carriers at the drain end of the channel can result inthe generation of electron-hole pairs. Typically, in an NFET, theelectrons move across the channel to the drain while the holes move intobulk material 106 thus creating potentially large sub-currents in bulkmaterial 106. In the prior art, if bulk material 106 were composed ofeven moderately resistive material, these sub-currents would result inlarge voltage drops throughout bulk material 106.

[0014]FIG. 1D shows a graph of the natural log of the substrate currentin an N-well (Inw) and P-well (Ipw) due to impact ionization as afunction of the source to drain potential (Vds) of a device. It is worthnoting for later reference that at a Vds of 1.0 volts (120) or less,there is virtually no impact ionization current, while at the typicalprior art CMOS Vds of 1.5 (123) to 5.0 (125) volts the impact ionizationcurrent is relatively high.

[0015] In addition to minimizing the effects of impact ionizationcurrent, the prior art taught that bulk material 106 must be lowresistance, and kept at a constant potential, to avoid latch-up.Latch-up is a well-known result of CMOS design that inherently includesparasitic bipolar transistors cross-coupled in the device. As a resultof these parasitic bipolar transistors, if the potential of bulkmaterial (Vpw) 106 becomes sufficiently large and forward biased, or ifthe n-well potential (Vnw) of n-well 111 (see FIG. 1A) becomessufficiently lower than the supply voltage (Vdd), a short is createdbetween ground (gnd) and supply voltage (Vdd). This short could drawenough current to not only shut down or “latch-up” the device, but inmany cases, the current draw was large enough to physically destroy thedevice. Latch-up typically occurs in devices with supply voltages of 0.8volts or greater. Note that in some cases, latch-up could be preventedeven if the supply voltage is greater than 0.8V using back bias. A backbiased bulk is much less likely to rise sufficiently above ground toturn on the parasitic NPN; likewise, a back biased N-well is much lesslikely to decrease sufficiently below Vdd to turn on the PNP.

[0016] Both impact ionization current and latch-up are well known tothose of skill in the art. As a result of these known effects, prior artCMOS devices, and the entire teaching in the prior art, was directed todevices which minimize these effects by having low resistance bulkmaterials 106 and keeping the bulk potential, V-bulk, as constant aspossible.

[0017]FIG. 1E shows the relationship between: the gate potential 160 (Vg160) of gate 104 (FIG. 1C); the drain potential 170 (Vd 170) of drain105; and the bulk potential 180 (V-bulk 180) in a device designedaccording to the prior art CMOS structures and teachings.

[0018] In FIG. 1E, at time T0: Vg 160 is at potential 161, typicallynear a digital zero; Vd 170 is at potential 171, typically near adigital one; and V-bulk 180 is at equilibrium potential 181, in oneembodiment ground. In time interval 191, i.e., between T1 and T2, thedevice turns on and: Vg 160 rises along ramp 163 from potential 161,typically near digital zero, to potential 165, typically near digitalone; at the same time, due to gate-bulk coupling capacitance 150, V-bulk180 increases slightly from equilibrium potential 181, typically ground,to potential 183, typically greater than ground, but significantly lessthan digital one. In one embodiment, potential 183 is 10 to 100millivolts greater than equilibrium potential 181.

[0019] During this same time frame, i.e., time interval 191, Vd 170remains relatively constant at near digital one. From time T2 on, Vg 160also remains relatively constant at near digital one. However, since thedevice being discussed is designed according to prior teachings to havea low resistance bulk material 106, at time T2, V-bulk 180 rapidly dropsback to potential 181, the equilibrium potential. In one embodiment,V-bulk 180 drops back to equilibrium potential 181 in 10 to 100pico-seconds, a small fraction of time interval 191.

[0020] In time interval 193, i.e., between time T3 and T4, the device ison and the drain potential is decreasing. Consequently, Vd 170 starts tofall from potential 171, typically near digital one, to potential 175,typically near digital zero, along ramp 173. Also in time interval 193,due to drain-bulk coupling capacitance 152, V-bulk 180 drops fromequilibrium potential 181, typically ground, to a lower potential 187along ramp 185 which tracks ramp 173. In one embodiment, potential 187is 10 to 100 millivolts less than equilibrium potential 181.

[0021] During this same time frame, i.e., time interval 193, Vg 160typically remains relatively constant at near digital one. From time T4on, Vd 170 also remains relatively constant at near digital zero.However, since the device being discussed is designed according to priorart teachings to have a low resistance bulk material 106, at time T4,V-bulk 180 rapidly rises back to equilibrium potential 181. In oneembodiment, V-bulk rises back to equilibrium potential 181 in 10 to 100pico-seconds, a small fraction of time interval 193.

[0022] Note, in FIG. 1E, time interval 191 is shown graphically spacedfrom time interval 193, however those of skill in the art will recognizethat in many cases time interval 191 will overlap with time interval 193creating a more complex wave form. Consequently, the representation inFIG. 1E has been simplified for illustrative purposes.

[0023] A similar, but reversed, process takes place when the deviceturns off, i.e., when Vg 160 goes back to a digital zero and Vd 170 goesback to a digital one. Consequently, in prior art CMOS devices, andaccording to prior art teachings, V-bulk 180 remains relatively constantin response to a single switching event. As a result, the thresholdvoltages of prior art devices such as NFET 101, PFET 102 and prior artback biased devices 101A and 100B remain relatively constant in responseto a given switching event. Therefore, while being very stable, priorart CMOS devices do not benefit from lower threshold voltages as thedevice turns on or relatively higher threshold voltages as the deviceturns off.

[0024] In contrast to prior art CMOS devices, such as NFET 101 and PFET102 discussed above, with their relatively constant bulk materialpotential during a switching event and correspondingly constantthreshold voltages, Partially Depleted Silicon On Insulator (PDSOI)devices have floating bulk potentials. Silicon-On-Insulator (SOI)devices are characterized by structures in which the silicon devicelayers are formed over an insulating film. FIG. 2A illustrates anexemplary configuration of such a device 200A. Device 200A of FIG. 2Aincludes an NFET 201 and a PFET 202 formed within a layer 236. Layer 236is located along an oxide layer 208 which itself is formed atop a P+bulk material 220. NFET 201 includes source and drain N-regions 203 and205, respectively, a P-type channel 216 and a gate electrode 204. PFET202 includes source and drain P-regions 208 and 210, respectively, anN-type channel 224 and a gate electrode 209. SOI devices, such as SOIdevice 200A, are characterized by low parasitic capacitances, as well ashigh dielectric isolation of the on-chip components.

[0025] A “partially depleted” SOI device refers to a structure in whichthe depletion region of the transistor does not extend all the way downto oxide layer 208. An example of this type of structure is shown inFIG. 2B. FIG. 2B shows a portion of a prior art partially depleted SOINFET device 201B. In the discussion below, NFET 201B was chosen forillustrative purposes only. Those of skill in the art will recognizethat a PFET device could also have been chosen and that the discussionand effects discussed below would be equally applicable, with theexception that the polarities would be reversed.

[0026] In FIG. 2B, the silicon layer 236B is relatively thick and theN-regions 203B and 205B are appropriately configured, typically throughuse of source-drain extensions, such that depletion region 228 is spacedfrom the upper surface of oxide layer 208B by a distance 230, i.e., onlya portion of the P-region 216B is depleted. Consequently, when the gatepotential is turned on, the potential of P-region 216B, below thedepletion region 228, i.e., the “bulk region 206B” is pulled up, wherebythe bulk material potential, V-bulk, of bulk material region 206B tracksthe gate potential. This results in a forward biasing of the bulk region206B that in turn decreases the threshold voltage of device 201B.

[0027] In FIG. 2C, the well-known effect of coupling capacitance betweengate 204B and bulk material region 206B is represented by gate-bulkcoupling capacitance 250 and the well known effects of couplingcapacitance between drain 205B and bulk material region 206B isrepresented by drain-bulk coupling capacitance 252. Due to gate-bulkcoupling capacitance 250, there is a tendency for the voltage of bulkmaterial region 206B, V-bulk, to track the voltage on gate 204B.

[0028]FIG. 2D illustrates the well known floating body effect by showingthe relationship between: the gate potential 260 (Vg 260) of gate 204B(FIG. 2B); the drain potential 270 (Vd 270) of drain 205B; and the bulkpotential 280 (V-bulk 280) in a,device such as partially depleted SOIdevice 201B designed according to the prior art structures andteachings.

[0029] In FIG. 2D, at time T0: Vg 260 is at potential 261, typicallynear a digital zero; Vd 270 is at potential 271, typically near adigital one; and V-bulk 280 is at potential 281. In time interval 291,i.e., between T1 and T2: Vg 260 rises along ramp 263 from potential 261,typically near digital zero, to potential 265, typically near digitalone. At the same time, due to gate-bulk coupling capacitance 250, V-bulk280 tracks Vg 260 and increases from equilibrium potential 281 topotential 283, typically greater than 281, and, in one embodiment, ashigh as a digital one greater than 281.

[0030] During this same time frame, i.e., time interval 291, Vd 270remains relatively constant at near digital one. From time T2 to timeT3, Vg 260 and V-bulk 280 remain relatively constant at their respectivevalues 265 and 283.

[0031] In time interval 293, i.e., between time T3 and T4, Vd 270 startsto fall from potential 271, typically near digital one, to potential275, typically near digital zero, along ramp 273. Also in time interval293, due to drain-bulk coupling capacitance 252, V-bulk 280 partiallytracks Vd 270 and drops from potential 283 to a lower potential 287,which, in one embodiment, is as much as a digital one below 283, alongramp 285, which tracks ramp 273. During this same time frame, i.e., timeinterval 293, Vg 260 typically remains relatively constant at neardigital one. From time T4 on, Vd 270 remains at near digital zero.

[0032] Note, in FIG. 2D, time interval 291 is shown graphically spacedfrom time interval 293, however those of skill in the art will recognizethat in many cases time interval 291 will overlap With time interval 293creating a more complex wave form. Consequently, the representation inFIG. 2D has been simplified for illustrative purposes.

[0033] Importantly, from time T4 on, V-bulk 280 remains relativelyconstant at potential 287, which, in FIG. 2D, is a higher potential thanthe equilibrium potential 281. Note, however, that in other instances,it is possible that potential 287 will be lower than potential 281,depending on the relative magnitude of coupling capacitances 250 and252. Consequently, V-bulk 280 typically does not return to itsequilibrium potential 281 before the next clock and becomesunpredictable with each successive clock period. This is the essence ofthe floating body effect discussed above.

[0034] A similar, but reversed, process takes place as the device turnsoff, i.e., when Vg 260 goes back to a digital zero and Vd 270 goes backto a digital one. However, each period results in continued variation inthe starting potential of V-bulk 280. Consequently, in prior art SOIdevices, the benefits of V-bulk 280 tracking the gate potential Vg 260,i.e., lowering the threshold voltage as the device turns on and raisingthe threshold voltage as the device turns off, are outweighed by theuncertainty of V-bulk 280, i.e., the floating body effect.

[0035] As discussed above, lowering the threshold voltage duringswitching of a device, such as NFET 201B, has several benefits includinghigher performance and/or lowering overall power consumption. However,in SOI devices, such as devices 200A and 201B, and, in particular,partially depleted SOI devices such as device 201B, when the bulkmaterial potential, V-bulk 280, of bulk material region 206B tracks thegate, the bulk material potential, V-bulk 280, of bulk region 206Bbecomes an uncontrollable and unpredictable variable. Consequently, incontrast to standard CMOS devices discussed above, in PDSOI devices, thepotential V-bulk cannot be known with any certainty, i.e., it floats.Therefore, the threshold voltage of the device can vary from clock toclock and period to period.

[0036] As discussed above, in prior art CMOS devices, it is taught thatthe bulk material, including any wells in the bulk material, should beas low resistance as possible and V-bulk should remain as relativelyconstant as possible to deal with large impact ionization currents andlatch-up. Consequently, prior art CMOS structures could not benefit froma variable V-bulk which tracks the gate potential and thereby lowers thethreshold voltage as the device turns on.

[0037] As also discussed above, while prior art partially depleted SOIdevices did allow the potential of the bulk material, V-bulk, to trackthe gate potential and thereby lower the threshold voltage as the deviceturned on, the floating body effect meant that the device typically didnot return to an equilibrium potential between clock periods. Therefore,neither V-bulk, nor the threshold voltage of the device, could becontrolled or predicted.

[0038] What is needed is a device whose threshold voltage lowers as thedevice turns on and then rises as the device turns off, like a partiallydepleted SOI device, yet has the equilibrium stability of prior art CMOSdevices so that V-bulk returns to a relatively known value within oneclock period. Consequently, what is needed is a device that allows thebulk material potential to track the gate potential to lower thethreshold voltage as the device turns on and raise the threshold voltageas the device turns off, yet allows the bulk material potential to becontrolled and stabilize at an equilibrium potential between clockperiods.

SUMMARY OF THE INVENTION

[0039] In one embodiment of the invention, a device is provided on asemiconductor substrate, the device includes: a bulk material of a firstconductivity type; source and drain regions of a second conductivitytype, positioned within the bulk material and separated by a channelregion; a gate positioned over the channel region; and a resistive wellof the first conductivity type positioned in the bulk material below thechannel region. A first location in the resistive well is electricallycoupled to the bulk material. The resistive well has an average dopantconcentration of the first conductivity type that is specifically chosento provide a resistance per unit length of the resistive well within adesired range.

[0040] In one embodiment of the invention, the device also includes awell tie of the first conductivity type positioned within the bulkmaterial. The well tie is positioned beside one of either the source ordrain regions and outside the channel region. The well tie iselectrically coupled to a second location in the resistive well. In oneembodiment of the invention, the first position in the resistive welland the second position in the resistive well are separated by ahorizontal distance. In one embodiment of the invention, the well tie iscoupled to a first supply voltage and the source is coupled to a secondsupply voltage.

[0041] In one embodiment of the invention, the device is a low powerdevice characterized as having an on current and an off current, and theratio of on current to off current in the device is not greater thanabout 10⁵. In one embodiment of the invention, the device has anunbiased threshold voltage of between about −150 millivolts and +150millivolts.

[0042] In contrast to the structures and teachings of the prior art, thepresent invention includes a structure for providing at least one lowpower MOS device that includes a resistive well specifically designed toprovide a resistive path between the bulk material of the device and awell tie contact. By providing a resistive path as taught by theinvention, an equivalent RC circuit is introduced to the device thatallows the bulk material potential to track the gate potential duringswitching, thereby lowering the threshold voltage as the device turns onand raising the threshold voltage as the device turns off. This givesdevices designed according to the invention the positive attributes ofprior art partially depleted SOI devices. However, the introduction ofthe resistive path, in accordance with the invention, also allows thebulk material potential to be controlled and stabilized at anequilibrium potential between clock periods. Therefore, devices designedaccording to the principles of the invention do not suffer from thefloating body effect associated with prior art partially depleted SOIdevices.

[0043] In addition, the devices according to one embodiment of theinvention are designed to be used in a low-power or ultra-low powerenvironment. Consequently, in contrast to prior art CMOS devices, thepresent invention can include resistive wells without fear of voltagedrops across the bulk material that are associated with large impactionization currents and/or latch-up and device self-destruct.

[0044] One embodiment of a device designed according to the principlesof the invention includes a bulk material of a first conductivity typewith source and drain regions positioned within the bulk material andseparated by a channel region, the source and drain regions having asecond conductivity type. A gate is positioned over the channel region.

[0045] The device also includes a resistive path in the bulk material,the resistive path being positioned in the bulk material so as to couplea first location in the bulk material, below the channel region, to asecond location in the bulk material, the resistive path having ahorizontal length. According to the principles of the invention, thehorizontal length of the resistive path is chosen to provide aresistance between the first location and the second location within aspecific range of resistance values.

[0046] Another embodiment of a device designed according to theprinciples of the invention includes a substrate having a first dopantconcentration of a first conductivity type and an epitaxial layer formedon the substrate, the epitaxial layer having a second dopantconcentration of the first conductivity type.

[0047] Source and drain regions are positioned within the epitaxiallayer and separated by a channel region, the source and drain regionshaving a second conductivity type. A gate is positioned over the channelregion.

[0048] According to the invention, a resistive path is positioned in theepitaxial layer and the substrate so as to couple a first location inthe epitaxial layer, below the channel region, to a second location inthe epitaxial layer, the resistive path having a horizontal length inthe substrate. The horizontal length of the resistive path is chosen toprovide a resistance between the first location and the second locationin the epitaxial layer within a specific range of resistance values.

[0049] In one embodiment of the invention, the first dopantconcentration is greater than the second dopant concentration.

[0050] Another embodiment of a device designed according to theprinciples of the invention includes a substrate of a first conductivitytype and a surface well having a first dopant concentration of a secondconductivity type formed in the substrate.

[0051] Source and drain regions are positioned within the surface welland separated by a channel region, the source and drain regions havingthe first conductivity type. A gate is positioned over the channelregion.

[0052] One embodiment includes a buried well having a second dopantconcentration of the second conductivity type, the buried well beingpositioned in the substrate, below the surface well.

[0053] In this embodiment, a resistive path is positioned so as tocouple a first location in the surface well, below the channel region,to a second location in the surface well, the resistive path having ahorizontal length in the buried well. The horizontal length of theresistive path in the buried well is chosen to provide a resistancebetween the first location and the second location in the surface wellwithin a specific range of resistance values.

[0054] In one embodiment, the first dopant concentration is less thanthe second dopant concentration.

[0055] Another embodiment of a device designed according to theprinciples of the invention includes a substrate having a first dopantconcentration of a first conductivity type and a layer formed on thesubstrate, the layer having a second dopant concentration of the firstconductivity type.

[0056] Source and drain regions are positioned within the layer andseparated by a channel-region, the source and drain regions having asecond conductivity type. A gate is positioned over the channel region.

[0057] This embodiment also includes a buried well having a seconddopant concentration of the second conductivity type, the buried wellbeing positioned between the substrate and the layer, the buried wellhaving a perforation.

[0058] According to this embodiment of the invention, a resistive pathis positioned in the layer and the substrate so as to couple a firstlocation in the layer, below the channel region, to a second location inthe layer, the resistive path having a horizontal length in thesubstrate that is coupled to the first and second locations in the layerthrough the perforation in the buried well. The horizontal length of theresistive path in the substrate is chosen to provide a resistancebetween the first location and the second location in the layer within aspecific range of resistance values.

[0059] A structure according to the principles of the inventionincludes: a substrate having a first dopant concentration of a firstconductivity type; a layer formed on the substrate, the layer having asecond dopant concentration of the first conductivity type; and asurface well having a first dopant concentration of a secondconductivity type formed in the layer.

[0060] A first transistor having source and drain regions separated by achannel region is positioned within the layer, the source and drainregions having a second conductivity type. A gate is positioned over thechannel region.

[0061] A second transistor having source and drain regions separated bya channel region is positioned within the surface well, the source anddrain regions having the first conductivity type. A gate is positionedover the channel region.

[0062] The structure includes a buried well having a second dopantconcentration of the second conductivity type, the buried well beingpositioned between the substrate and the layer, the buried well having aperforation.

[0063] A first resistive path is positioned in the layer and thesubstrate so as to couple a first location in the layer, below thechannel region of the first transistor, to a second location in thelayer, the first resistive path having a horizontal length in thesubstrate that is coupled to the first and second locations in the layerthrough the perforation in the buried well. The horizontal length of thefirst resistive path in the substrate is chosen to provide a resistancebetween the first location and the second location in the layer within aspecific range of resistance values.

[0064] A second resistive path is positioned so as to couple a firstlocation in the surface well, below the channel region of the secondtransistor, to a second location in the surface well, the secondresistive path having a horizontal length in the buried well. Thehorizontal length of the second resistive path in the buried well ischosen to provide a resistance between the first location and the secondlocation in the surface well within a specific range of resistancevalues.

[0065] In some embodiments of the invention the devices arecharacterized as having an on current and an off current and the ratioof on current to off current in the device is not greater than about10⁵. In addition, some devices of the invention have an unbiasedthreshold voltage of between about −150 millivolts and +150 millivolts.

[0066] As a result of these and other features discussed in more detailbelow, devices designed according to the principles of the presentinvention have the desirable attributes of both prior art CMOS devicesand prior art PDSOI devices, without the drawbacks of either of theseprior art devices.

[0067] It is to be understood that both the foregoing generaldescription and following detailed description are intended only toexemplify and explain the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0068] The accompanying drawings, which are incorporated in, andconstitute a part of this specification, illustrate embodiments of theinvention and, together with the description, serve to explain theadvantages and principles of the invention. In the drawings:

[0069]FIG. 1A shows a prior art CMOS device in which each of an NFET anda PFET essentially constitute a four-terminal device;

[0070]FIG. 1B shows a prior art device similar to the device of FIG. 1A,except that the substrate or bulk material of the NFET in FIG. 1B isbiased by way of a metallic back plane, rather than by way of a welltie;

[0071]FIG. 1C shows a portion of a prior art back biased device,including an NFET, and the well-known effect of coupling capacitancebetween the gate and the bulk material region and the well known effectof coupling capacitance between the drain and the bulk material regionin prior art CMOS devices;

[0072]FIG. 1D shows a graph of the natural log of the substrate currentdue to impact ionization as a function of the source to drain potentialof a device;

[0073]FIG. 1E shows the relationship between: the gate potential (Vg);the drain potential (Vd); and the bulk potential (V-bulk) in a prior artCMOS device designed according to the prior art teachings;

[0074]FIG. 2A illustrates an exemplary prior art SOI device;

[0075]FIG. 2B shows a portion of a prior art partially depleted SOI NFETdevice;

[0076]FIG. 2C shows the well-known effect of coupling capacitancebetween the gate and the bulk material region and the well known effectof coupling capacitance between the drain and the bulk material regionin prior art partially depleted SOI devices.

[0077]FIG. 2D illustrates the floating body effect by showing therelationship between: the gate potential (Vg); the drain potential (Vd);and the bulk potential (V-bulk) in a partially depleted SOI devicedesigned according to the prior art structures and teachings;

[0078]FIG. 3A shows one embodiment of a device in accordance with theprinciples of the present invention;

[0079]FIG. 3B shows a portion of the device of FIG. 3A, including anNFET in more detail, in accordance with the principles of the presentinvention;

[0080]FIG. 3C shows the equivalent RC circuit in the device of FIG. 3B,formed by the coupling capacitance between the gate and the bulkmaterial and the resistance of the resistive well, in accordance withthe principles of the present invention;

[0081]FIG. 3D shows the current (i), in an equivalent RC circuit inaccordance with the principles of the present invention, as a functionof time (t);

[0082]FIG. 3E shows the relationship between: the gate potential (Vg);the drain potential (Vd); and the bulk potential (V-bulk) in the deviceof FIG. 3B, in accordance with the principles of the present invention;

[0083]FIG. 4 shows an N-well resistive path device according to anembodiment of the invention;

[0084]FIG. 5 shows a resistive path epitaxial device according toanother embodiment of the invention;

[0085]FIG. 6 shows a buried N-well resistive path device according toanother embodiment of the invention;

[0086]FIG. 7A shows a perforated buried N-well resistive path deviceaccording to another embodiment of the invention;

[0087]FIG. 7B shows a second embodiment of a perforated buried N-wellresistive path device according to the invention;

[0088]FIG. 7C shows a third embodiment of a perforated buried N-wellresistive path device according to the invention;

[0089]FIG. 8 shows an N-well resistive path device according to anotherembodiment of the invention.

DETAILED DESCRIPTION

[0090] The invention will now be described in reference to theaccompanying drawings. The same reference numbers may be used throughoutthe drawings and the following description to refer to the same or likeparts.

[0091]FIG. 3A illustrates a resistive well device 300A according to oneembodiment of the invention. Device 300A includes an NFET 301 and a PFET302 each of which is essentially a four-terminal device. NFET 301 ismade up of an N-region source 303, a gate electrode 304, an N-regiondrain 305, formed in p-bulk material 306. Similarly, PFET 302 includesP-region source 308, a gate electrode 309 and a P-region drain 310formed in an N-well bulk material 311. The device of FIG. 3A alsoincludes a P plug that forms a well tie 312 and an N plug that forms awell tie 313.

[0092] In resistive well device 300A, according to one embodiment of theinvention, well tie 312 is electrically isolated from source terminal303 of the NFET 301 by providing a separate metallic rail contact 316which is spaced from the metallic rail contact 314 of source 303. Railcontact 316 is coupled to a bias voltage source Vpw. Likewise, wellcontact 313 is split off from source 308 of PFET 302 by providing aseparate metallic rail contact 318 that is electrically isolated frommetallic rail contact 315 of source 308. Rail contact 318 is coupled toa bias voltage source Vnw.

[0093] According to the invention, resistive well device 300A alsoincludes resistive wells 351 and 352. According to one embodiment of theinvention, resistive well 351 is a P-type well. In one embodiment of theinvention, resistive well 351 is doped with P-type dopant atoms toprovide the desired resistance level as discussed below. According toone embodiment of the invention, resistive well 352 is an N-type well.In one embodiment of the invention, resistive well 352 is doped withN-type dopant atoms to provide the desired resistance level, as alsodiscussed below.

[0094] According to one embodiment of the invention, the P+ plug thatforms well tie 312 is electrically coupled to point 353A in resistivewell 351 through path 353 and point 357 in bulk material 306, below thechannel of NFET 301, is electrically coupled to point 355A in resistivewell 351 through path 355. A horizontal, distance 351A separates point353A from point 355A. According to the invention, the value of distance351A is predetermined to provide a resistance within a desired range, asdiscussed in more detail below.

[0095] Similarly, according to one embodiment of the invention, the N+plug that forms well tie 313 is electrically coupled to point 354A inresistive well 352 through path 354 and point 358 in N-well bulkmaterial 311, below the channel of PFET 302, is electrically coupled topoint 356A in resistive well 352 through path 356. A horizontal distance352A separates point 354A from point 356A. According to the invention,the value of distance 352A is predetermined to provide a resistancewithin a desired range, as also discussed in more detail below.

[0096] In one embodiment of the invention, resistive wells 351 and 352,according to the invention, are created by dopant implantation methodswell know to those of skill in the art. The concentration and depth ofimplantation will vary from application to application. In particular,the resistivity of the well can be engineered by modifying its geometry(length, width, and thickness) as well as the dopant concentrationlaterally along its length. As discussed in more detail below, the goalis to compensate for the distance from a device to the nearest wellcontact, and according to the simultaneous switching activity in thevicinity of the device to achieve a well resistivity that restores thedevice's well potential to equilibrium before it switches again. Thus,according to the invention, the dopant concentration and well dimensionsare varied to adjust the resulting resistance per unit length ofresistive wells 351 and 352. In one embodiment of the invention, theP-type dopant concentration in P-type resistive well 351 is in theapproximate range of 1×e¹⁴ to 1×e¹⁷ per cm³ and the thickness ofresistive well 351 is approximately 0.1 micrometer to yield a resistanceof approximately 10 kilo-ohms to 10 mega-ohm per square.

[0097] In one embodiment of the invention the N-type dopantconcentration in N-type resistive well 352 is in the approximate rangeof 1×e¹⁶ to 1×e¹⁸ per cm³ and the thickness of resistive well 352 isapproximately 0.1 micrometer to yield a resistance of approximately 100ohms to 100 kilo-ohms per square.

[0098] Those of skill in the art will note that N-well 352 layer is muchless resistive than P-well 351 in this example and recognize that in anN-well technology, it is easier to shape the N-well/buried N-well pathto optimize its resistivity than it is to shape the P-well path, sincethe entire P-substrate is P-type.

[0099] Also, according to the invention, it is not necessary for theresistivity to be uniform within the well, just that it lie withinbounds that both enable a transient floating body effect during turn-onand a return to an equilibrium potential before the next time the gateswitches.

[0100] In another embodiment of the invention, resistive wells 351 and352 are formed by implanting surface profiles to form the wells, thenforming a surface layer of silicon (not shown) either through epitaxialgrowth or amorphous deposition followed by solid phase epitaxy tocrystallize the surface layer. This method has the advantage that itavoids a potential problem implanting wells resulting from the increaseddopant concentration in the surface tail of a deep implant.

[0101] As discussed above, the dopant concentration in resistive wells351 and 352 can be varied to yield a desired resistance. In addition,the overall resistance between points 353A and 355A, in resistive well351, and points 354A and 356A, in resistive well 352, can be varied byincreasing or decreasing the horizontal distances 351A and 352A inresistive wells 351 and 352, respectively. Therefore, a higherresistance can be achieved by increasing the value of 351A and 352A, ora lower resistance can be achieved by decreasing the value of 351A and352A.

[0102] The specific examples given above are for illustrative purposesonly. Those of skill in the art will readily recognize that virtuallyany resistance per unit length, and overall resistance, can be achievedand that different applications and devices will benefit from differentresistances.

[0103] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 312and point 357 in bulk material 306, or between well tie 313 and point358 in N-well bulk material 311, was to be avoided. As also discussedabove, *this teaching was adopted in light of the dual dangers ofvoltage drops due to large impact ionization currents and/or latch-up.However, as also discussed above, at source/drain (Vds) voltages of lessthan one volt, impact ionization currents drop off to insignificantlevels (see FIG. 1D) and latch-up can be avoided by operating at supplyvoltages of less than 0.8 volt.

[0104] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher well dopant concentration, which also tends to lower wellresistivity in the vicinity of the channel. Consequently, while it ispossible to engineer a resistive well in standard CMOS, it is easier inlow power or ultra-low power CMOS, because the thresholds are lower andthe well resistivity is naturally higher.

[0105] In one embodiment of the invention, the structures of FIGS. 3A,3B and 3C are low-power or ultra-low power devices where thesource/drain (Vds) voltages, and the supply voltages, are significantlybelow 0.8 volt. In one embodiment of the invention, the supply voltageoperates between 0.2 volt and 0.6 volt, depending on the operatingconditions resulting in source/drain voltages between 0.2 volt and 0.6volt.

[0106] By employing the structure of FIG. 3A in a low-power or ultra-lowpower environment, the present invention can be utilized without fear oflarge impact ionization currents, and the associated voltage dropsacross the bulk materials 306 and 311, and without fear of latch-up ordevice self destruct, as was the fear in the prior art.

[0107]FIG. 3B shows a portion of device 300A of FIG. 3A including NFET301 in more detail. In the discussion below, NFET 301 was chosen forillustrative purposes only. Those of skill in the art will recognizethat PFET 302 could also have been chosen and that the discussion andeffects discussed below would be equally applicable, with the exceptionthat the polarities would be reversed.

[0108]FIG. 3B shows NFET 301 including: N-region source 303; gateelectrode 304; N-region drain 305; P-bulk material 306; well tie 312,that is electrically coupled to point 353A in resistive well 351 throughpath 353; and point 357 in bulk material 306, that is electricallycoupled to point 355A in resistive well 351 through path 355. Horizontaldistance 351A separating point 353A from point 355A is also shown.

[0109] In FIG. 3C, the well-known effect of coupling capacitance betweengate 304 and bulk material 306 is represented by gate-bulk couplingcapacitance 350 and the well known effect of coupling capacitancebetween drain 305 and bulk material 306 is represented by drain-bulkcoupling capacitance 305A. In addition, the resistance of resistive well351, between points 353A and 355A, according to the invention, isrepresented by equivalent resistor 357. Consequently, an equivalent RCcircuit 399 is formed between well tie 312 and gate 304 using thestructure of the invention.

[0110] Series RC circuits, such as equivalent RC circuit 399, and theirbehavior are well known in the art. If it is assumed that gate-bulkcoupling capacitance 350 is uncharged when a potential is applied togate 304, then the initial potential across gate-bulk couplingcapacitance 350 is zero and the voltage difference between gate 304 andwell tie 312 is dropped across equivalent resistor 357, i.e., betweenpoints 353A and 355A of resistive well 351. As gate-bulk couplingcapacitance 350 charges, the voltage across gate-bulk couplingcapacitance 350 increases and the voltage across equivalent resistance357 decreases. After a long enough time passes, i.e., in steady state,all the voltage difference between gate 304 and well tie 312 is droppedacross gate-bulk coupling capacitance 350 and the voltage drop acrossequivalent resistance 357 is zero.

[0111] The result of this process is that the current in equivalent RCcircuit 399, as well as the voltage drop across gate-bulk couplingcapacitance 350 and the voltage drop across equivalent resistor 357, areexponential functions of time. FIG. 3D shows the current (i) inequivalent RC circuit 399 as a function of time (t). As can be seen inFIG. 3D, at time t=0, i.e., when a potential is applied to gate 304,current i is equal to I0. At t=th, current i has dropped to I0/2, halfthe initial value of i. By time t=RC, i.e., t equals the resistance ofequivalent resistor 357 multiplied by the capacitance of gate-bulkcoupling capacitance 350, current i has dropped to I0/e and, by timet=2th, i has dropped to I0/4.

[0112] The product RC, i.e., the resistance of equivalent resistor 357multiplied by the capacitance of gate-bulk coupling capacitance 350, iscalled the time constant, or relaxation time, of equivalent RC circuit399. Consequently, as can be seen in FIG. 3D, the relaxation time can beadjusted by choosing the appropriate value for equivalent resistor 357.

[0113] As discussed above, the dopant concentration in resistive wells351 and 352 (FIG. 3A) can be varied to yield a desired resistance. Inaddition, the overall resistance between points 353A and 355A, inresistive well 351, and points 354A and 356A, in resistive well 352, canbe varied by increasing or decreasing the horizontal distances 351A and352A in resistive wells 351 and 352, respectively (FIG. 3A).

[0114] As a result, according to the invention, the relaxation time ofequivalent RC circuit 399 (FIG. 3C) can be adjusted either by varyingthe dopant concentration of resistive well 351 or by varying thedistance between points 353A and 355A in resistive well 351. In oneembodiment of the invention, the dopant concentration and the distancebetween points 353A and 355A in resistive well 351 are selected so thatthe relaxation time (RC) of equivalent RC circuit 399 is five to fiftytimes the ramp time (391 and 393 in FIG. 3E) of the potential on gate304 and drain 305. Consequently, the potential of the bulk material,V-bulk, (380 in FIG. 3E) returns to an equilibrium potential (381 inFIG. 3E) before the next clock period. This aspect of the invention, andFIG. 3E, are discussed in more detail below.

[0115] The result of creating equivalent RC circuit 399, using theresistive wells according to the structure of the invention, is bestdescribed with reference to FIG. 3E. FIG. 3E shows the relationshipbetween: the gate potential 360 (Vg 360) of gate 304 (FIG. 3B); thedrain potential 370 (Vd 370) of drain 305; and the bulk potential 380(V-bulk 380) in device 301. As shown in FIG. 3E, at time T0: Vg 360 isat potential 361, typically near a digital zero; Vd 370 is at potential371, typically near a digital one; and V-bulk 380 is at equilibriumpotential 381, in one embodiment ground. In time interval 391, i.e.,between T1 and T2: Vg 360 rises along ramp 363 from potential 361,typically near digital zero, to potential 365, typically near digitalone; at the same time, due to gate-bulk coupling capacitance 350, V-bulk381 tracks Vg 360 and increases from potential 381, typically ground, topotential 383, typically greater than ground, but less than digital one,along ramp 382. In one embodiment of the invention, V-bulk rises ⅓ to ⅕the amount Vg rises. During this same time frame, i.e., time interval391, Vd 370 remains relatively constant at near digital one. In timeinterval 395, i.e., from time T2 to time T3, Vg 360 remains relativelyconstant at value 365. However, with the introduction of equivalent RCcircuit 399 (FIG. 3C) using the resistive wells according to the methodand structure of the invention, V-bulk 380 falls back to equilibriumpotential 381 along RC curve 384 such that by time T3, V-bulk 380 isback at virtually the same equilibrium potential 381 as it was at timeT0. In addition, as discussed above, using the method and structure ofthe invention, the time for V-bulk 380 to fall back to equilibriumpotential 381, i.e., time interval 395, can be predetermined bypre-selecting the appropriate doping levels of the resistive well 351(FIG. 3B), the distance 351A between points 353A and 355A in resistivewell 351 and the shape of well 351.

[0116] In time interval 393, i.e., between time T4 and T5, Vd 370 startsto fall from potential 371, typically near digital one, to potential375, typically near digital zero, along ramp 373. Also in time interval393, due to drain-bulk coupling capacitance 305A, V-bulk 380 tracks Vd370 and drops from equilibrium potential 381 to a lower potential 387.In one embodiment of the invention, V-bulk falls {fraction (1/3)} o{fraction (1/5)} the amount Vd falls, along ramp 385 which tracks ramp373. During this same time frame, i.e., time interval 393, Vg 360typically remains relatively constant at near digital one. From time T5forward, Vd 370 remains relatively constant at near digital zero.However, with the introduction of equivalent RC circuit 399 (FIG. 3C)using resistive wells according to the structure of the invention,V-bulk 380 rises back to equilibrium potential 381 along RC curve 389such that by time T6, V-bulk 380 is back at virtually the sameequilibrium potential 381 as it was at time T0. In addition, asdiscussed above, using the method and structure of the invention, thetime for V-bulk 380 to rise back to equilibrium potential 381, i.e.,time interval 397, can be predetermined by pre-selecting the appropriatedoping levels of the resistive well 351 (FIG. 3B) and the distance 351Abetween points 353A and 355A in resistive well 351.

[0117] Note, in FIG. 3E, time interval 391 is shown graphically spacedfrom time interval 393, however those of skill in the art will recognizethat in many cases time interval 391 will overlap with time interval 393creating a more complex wave form. Consequently, the representation inFIG. 3E has been simplified for illustrative purposes.

[0118] As discussed above, according to the invention, the relaxationtime (RC) of equivalent RC circuit 399 (FIG. 3C) can be adjusted eitherby varying the dopant concentration of resistive well 351 or by varyingthe distance between points 353A and 355A in resistive well 351. In oneembodiment of the invention, the dopant concentration and the distancebetween points 353A and 355A in resistive well 351 are selected so thatthe relaxation time (RC), i.e., time intervals 395 and 397 in FIG. 3E,of equivalent RC circuit 399, and V-bulk 380, is five to fifty times theramp time, i.e., time intervals 391 and 393 in FIG. 3E, of Vg 360 and Vd370. Consequently, the potential of bulk material 306, V-bulk 380,returns to equilibrium potential 381 before the next clock period.

[0119] As shown in FIG. 3E, with the introduction of equivalent RCcircuit 399 according to the invention, V-bulk 380 tracks Vg 360 duringtime interval 391, just like prior art partially depleted SOI device200A (See FIGS. 2C and 2D). Consequently, when the device is turning on,the threshold voltage of NFET 301 is advantageously lowered (FIG. 3E).Then, once NFET 301 is turned on, because of the introduction ofequivalent resistance 357 (FIG. 3C) and equivalent RC circuit 399according to the invention, V-bulk 380 falls back to equilibriumpotential 381 (FIG. 3E) before the next clock period. Thus, NFET 301shows the stability of prior art CMOS devices with a predictable andstable bulk material potential, V-bulk 380, and threshold voltage (FIG.1E).

[0120] A similar, but reversed, process takes place when the deviceturns off, i.e., when Vg 360 goes back to a digital zero and Vd 370 goesback to-a digital one. Consequently, the structure of the inventionprovides for devices whose threshold voltage lowers as the device turnson and then rises as the device turns off, like a partially depleted SOIdevice, yet has the equilibrium stability of prior art CMOS devices sothat V-bulk returns to a relatively known value within one clock period.

[0121] In addition to the embodiments of the invention discussed abovewith respect to FIGS. 3A, 3B, 3C, 3D and 3E, other embodiments of theinvention include different configurations of resistive path devices.Some devices according to the invention use resistive wells to form theresistive path while others do not use resistive wells at all. In theseembodiments of the invention, a resistive path is created by simplycontrolling distances between elements in the device or by carefullycontrolling the physical parameters of the device such as the thicknessof an epitaxial layer. FIGS. 4, 5, 6, 7A, 7B, 7C and 8 show just a fewof the possible variations and configurations that can be formed inaccordance with the principles of the present invention.

[0122]FIG. 4 illustrates a resistive path device 400 according to oneembodiment of the invention. Device 400 includes an NFET 401 and a PFET402 each of which is essentially a four-terminal device. NFET 401 ismade up of an N-region source 403, a gate electrode 404 and an N-regiondrain 405, formed in P-bulk material 406. Similarly, PFET 402 includesP-region source 408, a gate electrode 409 and a P-region drain 410formed in an N-well bulk material 411. The device of FIG. 4 alsoincludes a P+ plug that forms a well tie 412 and an N+ plug that forms awell tie 413.

[0123] In resistive path device 400, according to one embodiment of theinvention, well tie 412 is electrically isolated from source terminal403 of NFET 401 by providing a separate metallic rail contact 416 whichis spaced from the metallic rail contact 414 of source 403. Rail contact416 is coupled to a bias voltage source Vpw. Likewise, well contact 413is split off from source 408 of PFET 402 by providing a separatemetallic rail contact 418 that is electrically isolated from metallicrail contact 415 of source 408. Rail contact 418 is coupled to a biasvoltage source Vnw.

[0124] According to the invention, resistive well device 400 alsoincludes resistive paths 451 and 452. According to one embodiment of theinvention, resistive path 451 is in P-bulk material 406. In oneembodiment of the invention, resistive path 451 includes a horizontaldistance 451A, between points 453A and 455A in P-bulk material 406, thatcan be varied to provide the desired resistance level.

[0125] According to one embodiment of the invention, the P+ plug thatforms well tie 412 is electrically coupled to point 453A of resistivepath 451 through path 453. Likewise, point 457 in P bulk material 406,below the channel of NFET 401, is electrically coupled to point 455A ofresistive path 451 through path 455 As noted above, horizontal distance451A separates point 453A from point 455A and, according to theinvention, the value of distance 451A is predetermined to provide aresistance within a desired range.

[0126] Similarly, According to one embodiment of the invention,resistive path 452 is in N-well bulk material 411. In one embodiment ofthe invention, resistive path 452 includes a horizontal distance 452A,between points 454A and 456A in N-well bulk material 411, that can bevaried to provide the desired resistance level.

[0127] According to one embodiment of the invention, the N+ plug thatforms well tie 413 is electrically coupled to point 454A of resistivepath 452 through path 454. Likewise, point 458 in N-well bulk material411, below the channel of PFET 402, is electrically coupled to point456A of resistive path 452 through path 456. As noted above, horizontaldistance 452A separates point 454A from point 456A and, according to theinvention, the value of distance 452A is predetermined to provide aresistance within a desired range.

[0128] According to the invention, it is not necessary for theresistivity to be uniform within the P-bulk region 406 or N-well bulkregion 411. All that is required is that the total resistivity alongresistive paths 451 and 452 lie within bounds that both enable atransient floating body effect during turn-on and a return to anequilibrium potential before the next time the gate switches, asdiscussed in more detail above.

[0129] As also discussed above, the overall resistance between points453A and 455A, in resistive path 451, and points 454A and 456A, inresistive path 452, can be varied by increasing or decreasing thehorizontal distances 451A and 452A in resistive paths 451 and 452,respectively. Therefore, a higher resistance can be achieved byincreasing the value of 451A and 452A, or a lower resistance can beachieved by decreasing the value of 451A and 452A.

[0130] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 412and point 457 or between well tie 413 and point 458 was to be avoided.As also discussed above, this teaching was adopted in light of the dualdangers of voltage drops due to large impact ionization currents and/orlatch-up. However, as also discussed above, at source/drain (Vds)voltages of less than one volt, impact ionization currents drop off toinsignificant levels (see FIG. 1D) and latch-up can be avoided byoperating at supply voltages of less than 0.8 volt.

[0131] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher dopant concentration, which also tends to lower resistivity inthe vicinity of the channel. Consequently, while it is possible toengineer a resistive path in standard CMOS, it is easier in low power orultra-low power CMOS, because the thresholds are lower and the pathresistivity is naturally higher.

[0132] In one embodiment of the invention, the structure of FIG. 4 is alow-power or ultra-low power device where the source/drain (Vds)voltages, and the supply voltages, are significantly below 0.8 volt. Inone embodiment of the invention, the supply voltage operates between 0.2volt and 0.6 volt, depending on the operating conditions resulting insource/drain voltages between 0.2 volt and 0.6 volt.

[0133] By employing the structure of FIG. 4 in a low-power or ultra-lowpower environment, the present invention can be utilized without fear oflarge impact ionization currents, and the associated voltage dropsacross the bulk materials 406 and 411, and without fear of latch-up ordevice self destruct, as was the fear in the prior art.

[0134] Device 400 of FIG. 4 includes all of the advantages of device300A, discussed above in connection with FIGS. 3A, 3B, 3C, 3D and 3E. Inaddition, device 400 does not necessitate the formation of buriedresistive wells. Consequently, device 400 is a particularly economicalimplementation of the present invention.

[0135]FIG. 5 illustrates a resistive path epitaxial device 500 accordingto one embodiment of the invention. Device 500 includes an NFET 501 anda PFET 502 each of which is essentially a four-terminal device. Indevice 500, NFET 501 and a PFET 502, including N-well 511, are formed inan epitaxial lightly doped P-layer 506A formed over a heavily dopedP-substrate 506B. NFET 501 is made up of an N-region source 503, a gateelectrode 504 and an N-region drain 505 formed in lightly doped P-layer506A. Similarly, PFET 502 includes P-region source 508, a gate electrode509 and a P-region drain 510 formed in an N-well bulk material 511 withN-well bulk material 511 being formed in lightly doped P-layer 506A. Thedevice of FIG. 5 also includes a P+ plug that forms a well tie 512 andan N+ plug that forms a well tie 513.

[0136] As discussed above, in the embodiment of the invention shown FIG.5, layer 506A is lightly doped P-layer formed over a heavily dopedP-substrate 506B. Those of skill in the art will recognize that in otherembodiments, layer 506A is a P-layer while substrate 506B is an N+substrate. In these embodiments, substrate 506B electrically isolatesP-layer 506A so that additional subsurface P- and N-wells (not shown)may be included to provide suitably resistive paths according to theinvention.

[0137] Returning to the embodiment shown in FIG. 5, in epitaxialresistive path device 500, according to one embodiment of the inventionwell tie 512 is electrically isolated from source terminal 503 of theNFET 501 by providing a separate metallic rail contact 516 which isspaced from the metallic rail contact 514 of source 503. Rail contact516 is coupled to a bias voltage source Vpw. Likewise, well contact 513is split off from source 508 of PFET 502 by providing a separatemetallic rail contact 518 that is electrically isolated from metallicrail contact 515 of source 508. Rail contact 518 is coupled to a biasvoltage source Vnw.

[0138] According to the invention, epitaxial resistive path device 500also includes resistive paths 551 and 552. According to one embodimentof the invention, resistive path 551 is in heavily doped P-substrate506B. In one embodiment of the invention, resistive path 551 includes ahorizontal distance 551A, between points 553A and 555A in heavily dopedP-substrate 506B, that can be varied to provide the desired resistancelevel.

[0139] According to one embodiment of the invention, the P+ plug thatforms well tie 512 is electrically coupled to point 553A of resistivepath 551 via path 553. Path 553 extends through lightly doped P-layer506A to point 553A in heavily doped P-substrate 506B. Likewise, point557 in lightly doped P-layer 506A, below the channel of NFET 501, iselectrically coupled to point 555A of resistive path 551 via path 555.Path 555 extends through lightly doped P-layer 506A to point 555A inheavily doped P-substrate 506B. As noted above, horizontal distance 551Aseparates point 553A from point 555A and, according to the invention,the value of distance 551A is predetermined to provide a resistancewithin a desired range.

[0140] According to the one embodiment of the invention shown in FIG. 5,resistive path 552 is in N-well bulk material 511. In one embodiment ofthe invention, resistive path 552 includes a horizontal distance 552A,between points 554A and 556A in N-well bulk material 511, that can bevaried to provide the desired resistance level.

[0141] According to one embodiment of the invention, the N+ plug thatforms well tie 513 is electrically coupled to point 554A of resistivepath 552 through path 554. Likewise, point 558 in N-well bulk material511, below the channel of PFET 502, is electrically coupled to point556A of resistive path 552 through path 556. As noted above, horizontaldistance 552A separates point 554A from point 556A and, according to theinvention, the value of distance 552A is predetermined to provide aresistance within a desired range.

[0142] According to the invention, it is not necessary for theresistivity to be uniform within heavily doped P-substrate 506B orN-well bulk region 511. All that is required is that the totalresistivity along resistive paths 551 and 552 lie within bounds thatboth enable a transient floating body effect during turn-on and a returnto an equilibrium potential before the next time the gate switches, asdiscussed in more detail above.

[0143] As also discussed above, the overall resistance between points553A and 555A, in resistive path 551, and points 554A and 556A, inresistive path 552, can be varied by increasing or decreasing thehorizontal distances 551A and 552A in resistive paths 551 and 552,respectively. Therefore, a higher resistance can be achieved byincreasing the value of 551A and 552A, or a lower resistance can beachieved by decreasing the value of 551A and 552A. In addition, withdevice 500, the overall resistance between points 553A and 555A, inresistive path 551 can be adjusted by increasing or decreasing thedopant concentration in heavily doped P-substrate 506B. In addition, theoverall resistance between well tie 512 and point 557 or between welltie 513 and point 558 can be adjusted by changing the thickness 570 ofepitaxial lightly doped P-layer 506A.

[0144] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 512and point 557 or between well tie 513 and point 558 was to be avoided.As also discussed above, this teaching was adopted in light of the dualdangers of voltage drops due to large impact ionization currents and/orlatch-up. However, as also discussed above, at source/drain (Vds)voltages of less than one volt, impact ionization currents drop off toinsignificant levels (see FIG. 1D) and latch-up can be avoided byoperating at supply voltages of less than 0.8 volt.

[0145] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher dopant concentration, which also tends to lower resistivity inthe vicinity of the channel. Consequently, while it is possible toengineer a resistive path in standard CMOS, it is easier in low power orultra-low power CMOS, because the thresholds are lower and the pathresistivity is naturally higher.

[0146] In one embodiment of the invention, the structure of FIG. 5 is alow-power or ultra-low power device where the source/drain (Vds)voltages, and the supply voltages, are significantly below 0.8 volt. Inone embodiment of the invention, the supply voltage operates between 0.2volt and 0.6 volt, depending on the operating conditions resulting insource/drain voltages between 0.2 volt and 0.6 volt.

[0147] By employing the structure of FIG. 5 in a low-power or ultra-lowpower environment, the present invention can be utilized without fear oflarge impact ionization currents, and the associated voltage dropsacross the bulk materials 506 and 511, and without fear of latch-up ordevice self destruct, as was the fear in the prior art.

[0148] Device 500 of FIG. 5 includes all of the advantages of device300A, discussed above in connection with FIGS. 3A, 3B, 3C, 3D and 3E. Inaddition, device 500 does not necessitate the formation of buriedresistive paths other than the use of heavily doped P-substrate 506B.Consequently, device 500 is another particularly economicalimplementation of the present invention.

[0149]FIG. 6 illustrates a buried N-well resistive path device 600according to one embodiment of the invention. Device 600 includes anNFET 601 and a PFET 602 each of which is essentially a four-terminaldevice. Device 600 also includes heavily doped buried N-well 670. Indevice 600, NFET 601 and a PFET 602, including N-well 611, are formed inP-bulk material 606. NFET 601 is made up of an N-region source 603, agate electrode 604 and an N-region drain 605. Similarly, PFET 602includes P-region source 608, a gate electrode 609 and a P-region drain610 formed in an N-well bulk material 611. The device of FIG. 6 alsoincludes a P+ plug that forms a well tie 612 and an N+ plug that forms awell tie 613.

[0150] In buried N-well resistive path device 600, according to oneembodiment of the invention, well tie 612 is electrically isolated fromsource terminal 603 of the NFET 601 by providing a separate metallicrail contact 616 which is spaced from the metallic rail contact 614 ofsource 603. Rail contact 616 is coupled to a bias voltage source Vpw.Likewise, well contact 613 is split off from source 608 of PFET 602 byproviding a separate metallic rail contact 618 that is electricallyisolated from metallic rail contact 615 of source 608. Rail contact 618is coupled to a bias voltage source Vnw.

[0151] According to the invention, buried N-well resistive path device600 also includes resistive paths 651 and 652. According Lo oneembodiment of the invention, resistive path 651 is in P-bulk material606. In one embodiment of the invention, resistive path 651 includes ahorizontal distance 651A, between points 653A and 655A in P-bulkmaterial 606, that can be varied to provide the desired resistancelevel.

[0152] According to one embodiment of the invention, the P+ plug thatforms well tie 612 is electrically coupled to point 653A in P-bulkmaterial 606 via path 653. Likewise, point 657 in P-bulk material 606,below the channel of NFET 601, is electrically coupled to point 655A ofresistive path 651 in P-bulk material 606 via path 655. As noted above,horizontal distance 651A separates point 653A from point 655A and,according to the invention, the value of distance 651A is predeterminedto provide a resistance within a desired range.

[0153] According to the one embodiment of the invention shown in FIG. 6,resistive path 652 is in heavily doped buried N-well 670. In oneembodiment of the invention, resistive path 652 includes a horizontaldistance 652A, between points 654A and 656A in heavily doped buriedN-well 670. According to the invention, horizontal distance 652A can bevaried to provide the desired resistance level.

[0154] According to one embodiment of the invention, the N+plug thatforms well tie 613 is electrically coupled to point 654A of resistivepath 652 via path 654. Path 654 passes through N-well bulk material 611to point 654A in heavily doped buried N-well 670. Likewise, point 658 inN-well bulk material 611, below the channel of PFET 602, is electricallycoupled to point 656A of resistive path 652 via path 656. Path 656passes through N-well bulk material 611 to point 656A in heavily dopedburied N-well 670. As noted above, horizontal distance 652A separatespoint 654A from point 656A and, according to the invention, the value ofdistance 652A is predetermined to provide a resistance within a desiredrange.

[0155] According to the invention, it is not necessary for theresistivity to be uniform within P-bulk material 606 or heavily dopedburied N-well 670. All that is required is that the total resistivityalong resistive paths 651 and 652 lie within bounds that both enable atransient floating body effect during turn-on and a return to anequilibrium potential before the next time the gate switches, asdiscussed in more detail above.

[0156] As discussed above, the overall resistance between points 653Aand 655A, in resistive path 651, and points 654A and 656A, in resistivepath 652, can be varied by increasing or decreasing the horizontaldistances 651A and 652A in resistive paths 651 and 652, respectively.Therefore, a higher resistance can be achieved by increasing the valueof 651A and 652A, or a lower resistance can be achieved by decreasingthe value of 651A and 652A. In addition, with device 600, the overallresistance between points 654A and 656A, in resistive path 652, can beadjusted by increasing or decreasing the dopant concentration in heavilydoped buried N-well 670.

[0157] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 612and point 657 or between well tie 613 and point 658 was to be avoided.As also discussed above, this teaching was adopted in light of the dualdangers of voltage drops due to large impact ionization currents and/orlatch-up. However, as also discussed above, at source/drain (Vds)voltages of less than one volt, impact ionization currents drop off toinsignificant levels (see FIG. 1D) and latch-up can be avoided byoperating at supply voltages of less than 0.8 volt.

[0158] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher dopant concentration, which also tends to lower resistivity inthe vicinity of the channel. Consequently, while it is possible toengineer a resistive path in standard CMOS, it is easier in low power orultra-low power CMOS, because the thresholds are lower and the pathresistivity is naturally higher.

[0159] In one embodiment of the invention, the structure of FIG. 6 is alow-power or ultra-low power device where the source/drain (Vds)voltages, and the supply voltages, are significantly below 0.8 volt. Inone embodiment of the invention, the supply voltage operates between 0.2volt and 0.6 volt, depending on the operating conditions resulting insource/drain voltages between 0.2 volt and 0.6 volt.

[0160] By employing the structure of FIG. 6 in a low-power or ultra-lowpower environment, the present invention can be utilized without fear oflarge impact ionization currents, and the associated voltage dropsacross the bulk materials 606 and 611, and without fear of latch-up ordevice self destruct, as was the fear in the prior art.

[0161] Device 600 of FIG. 6 includes all of the advantages of device300A, discussed above in connection with FIGS. 3A, 3B, 3C, 3D and 3E. Inaddition, device 600 does not necessitate the formation of two buriedresistive paths. Instead, only the single heavily doped buried N-well670 is required. Consequently, device 600 is another economicalimplementation of the present invention.

[0162]FIG. 7A illustrates a perforated buried N-well resistive pathdevice 700A according to one embodiment of the invention. Device 700Aincludes an NFET 701 and a PFET 702 each of which is essentially afour-terminal device. In device 700A, NFET 701 and a PFET 702, includingN-well 711, are formed in lightly doped P-layer 706A which is formed onheavily doped P-substrate 706B. Device 700A also includes heavily dopedperforated buried N-well 770 formed between lightly doped P-layer 706Aand heavily doped P-substrate 706B. NFET 701 is made up of an N-regionsource 703, a gate electrode 704 and an N-region drain 705. Similarly,PFET 702 includes P-region source 708, a gate electrode 709 and aP-region drain 710 formed in an N-well bulk material 711. The device ofFIG. 7A also includes a P+ plug that forms a well tie 712 and an N+plugthat forms a well tie 713.

[0163] In perforated buried N-well resistive path device 700A, accordingto one embodiment of the invention, well tie 712 is electricallyisolated from source terminal 703 of the NFET 701 by providing aseparate metallic rail contact 716 which is spaced from the metallicrail contact 714 of source 703. Rail contact 716 is coupled to a biasvoltage source Vpw. Likewise, well tie 713 is split off from source 708of PFET 702 by providing a separate metallic rail contact 718 that iselectrically isolated from metallic rail contact 715 of source 708. Railcontact 718 is coupled to a bias voltage source Vnw.

[0164] According to the invention, perforated buried N-well resistivepath device 700A also includes resistive paths 751 and 752. According toone embodiment of the invention, resistive path 751 is in heavily dopedP-substrate 706B. In one embodiment of the invention, resistive path 751includes a horizontal distance 751A, between points 753A and 755A inheavily doped P-substrate 706B, that can be varied to provide thedesired resistance level.

[0165] According to one embodiment of the invention, the P+ plug thatforms well tie 712 is electrically coupled to point 753A in heavilydoped P-substrate 706B via path 753. Path 753 extends throughperforation 790 in heavily doped perforated buried N-well 770 to heavilydoped P-substrate 7069. Likewise, point 757 in lightly doped P-layer706A, below the channel of NFET 701, is electrically coupled to point755A of resistive path 751 in heavily doped P-substrate 706B via path755. Path 755 extends through perforation 790 in heavily dopedperforated buried N-well 770 to heavily doped P-substrate 706B. As notedabove, horizontal distance 751A separates point 753A from point 755Aand, according to the invention, the value of distance 751A ispredetermined to provide a resistance within a desired range.

[0166] According to the one embodiment of the invention shown in FIG.7A, resistive path 752 is in N-well bulk material 711. In one embodimentof the invention, resistive path 752 includes a horizontal distance752A, between points 754A and 756A in N-well bulk material 711, that canbe varied to provide the desired resistance level.

[0167] According to one embodiment of the invention, the N+ plug thatforms well tie 713 is electrically coupled to point 754A of resistivepath 752, via path 754. Likewise, point 758 in N-well bulk material 711,below the channel of PFET 702, is electrically coupled to point 756A ofresistive path 752, via path 756. As noted above, horizontal distance752A separates point 754A from point 756A and, according to theinvention, the value of distance 752A is predetermined to provide aresistance within a desired range.

[0168] According to the invention, it is not necessary for theresistivity to be uniform within heavily doped P-substrate 706B orN-well bulk material 711. All that is required is that the totalresistivity along resistive paths 751 and 752 lie within bounds thatboth enable a transient floating body effect during turn-on and a returnto an equilibrium potential before the next time the gate switches, asdiscussed in more detail above.

[0169] As discussed above, the overall resistance between points 753Aand 755A, in resistive path 751, and points 754A and 756A, in resistivepath 752, can be varied by increasing or decreasing the horizontaldistances 751A and 752A in resistive paths 751 and 752, respectively.Therefore, a higher resistance can be achieved by increasing the valueof 751A and 752A, or a lower resistance can be achieved by decreasingthe value of 751A and 752A. In addition, with device 700A, the overallresistance between points 753A and 755A, in resistive path 751, can beadjusted by increasing or decreasing the dopant concentration in heavilydoped P-substrate 706B.

[0170]FIG. 7B illustrates a perforated buried N-well resistive pathdevice 700B according to one embodiment of the invention. Device 700Bincludes an NFET 701 and a PFET 702 each of which is essentially afour-terminal device. In device 700B, NFET 701 and a PFET 702, includingN-well 711, are formed in lightly doped Player 706A which is formed onheavily doped P-substrate 706B. Device 700B also includes heavily dopedperforated buried N-well 770 formed between lightly doped P-layer 706Aand heavily doped P-substrate 706B. NFET 701 is made up of an N-regionsource 703, a gate electrode 704 and an N-region drain 705. Similarly,PFET 702 includes P-region source 708, a gate electrode 709 and aP-region drain 710 formed in an N-well bulk material 711. The device ofFIG. 7B also includes a P+ plug that forms a well tie 712 and an N+ plugthat forms a well tie 713.

[0171] In perforated buried N-well resistive path device 700B, accordingto one embodiment of the invention, well tie 712 is electricallyisolated from source terminal 703 of the NFET 701 by providing aseparate metallic rail contact 716 which is spaced from the metallicrail contact 714 of source 703. Rail contact 716 is coupled to a biasvoltage source Vpw. Likewise, well contact 713 is split off from source708 of PFET 702 by providing a separate metallic rail contact 718 thatis electrically isolated from metallic rail contact 715 of source 708.Rail contact 718 is coupled to a bias voltage source Vnw.

[0172] According to the invention, perforated buried N-well resistivepath device 700B also includes resistive paths 751 and 752. According toone embodiment of the invention, resistive path 751 is in heavily dopedP-substrate 706B. In one embodiment of the invention, resistive path 751includes a horizontal distance 751A, between points 753A and 755A inheavily doped P-substrate 706B, that can be varied to provide thedesired resistance level.

[0173] According to one embodiment of the invention, the P+ plug thatforms well tie 712 is electrically coupled to point 753A in heavilydoped P-substrate 706B via path 753. Path 753 extends throughperforation 790 in heavily doped perforated buried N-well 770 to heavilydoped P-substrate 706B. Likewise, point 757 in P-bulk material 706,below the channel of NFET 701, is electrically coupled to point 755A ofresistive path 751 in heavily doped P-substrate 706B via path 755. Path755 extends through perforation 790 in heavily doped perforated buriedN-well 770 to heavily doped P-substrate 706B. As noted above, horizontaldistance 751A separates point 753A from point 755A and, according to theinvention, the value of distance 751A is predetermined to provide aresistance within a desired range.

[0174] According to the one embodiment of the invention shown in FIG.7B, resistive path 752 is in heavily doped perforated buried N-well 770.In one embodiment of the invention, resistive path 752-includes ahorizontal distance 752A, between points 754A and 756A in heavily dopedperforated buried N-well 770, that can be varied to provide the desiredresistance level.

[0175] According to one embodiment of the invention, the N+ plug thatforms well tie 713 is electrically coupled to point 754A of resistivepath 752 via path 754. Path 754 passes through N-well bulk material 711to point 754A in heavily doped perforated buried N-well 770. Likewise,point 758 in N-well bulk material 711, below the channel of PFET 702, iselectrically coupled to point 756A of resistive path 752 via path 756.Path 756 passes through N-well bulk material 711 to point 756A inheavily doped perforated buried N-well 770. As noted above, horizontaldistance 752A separates point 754A from point 756A and, according to theinvention, the value of distance 752A is predetermined to provide aresistance within a desired range.

[0176] According to the invention, it is not necessary for theresistivity to be uniform within heavily doped P-substrate 706B orheavily doped perforated buried N-well 770. All that is required is thatthe total resistivity along resistive paths 751 and 752 lie withinbounds that both enable a transient floating body effect during turn-onand a return to an equilibrium potential before the next time the gateswitches, as discussed in more detail above.

[0177] As also discussed above, the overall resistance between points753A and 755A, in resistive path 751, and points 754A and 756A, inresistive path 752, can be varied by increasing or decreasing thehorizontal distances 751A and 752A in resistive paths 751 and 752,respectively. Therefore, a higher resistance can be achieved byincreasing the value of 751A and 752A, or a lower resistance can beachieved by decreasing the value of 751A and 752A. In addition, withdevice 700B, the overall resistance between points 754A and 756A, inresistive path 752, can be adjusted by increasing or decreasing thedopant concentration in heavily doped perforated buried N-well 770 Inaddition, with device 700B, the overall resistance between points 753Aand 755A, in resistive path 751, can be adjusted by increasing ordecreasing the dopant concentration in heavily doped P-substrate 706B.

[0178]FIG. 7C illustrates another embodiment of a perforated buriedN-well resistive path device 700C according to one embodiment of theinvention. Device 700C is identical to device 700B discussed aboveexcept that device 700C includes two perforations, 790A and 790B, inheavily doped perforated buried N-well 770 in place of the singleperforation 790 of device 700B. According to this embodiment of theinvention, the P+ plug that forms well tie 712 is electrically coupledto point 753A in heavily doped P-substrate 706B via path 753. Path 753extends through perforation 790A in heavily doped perforated buriedN-well 770 to heavily doped P-substrate 706B. Likewise, point 757 inP-bulk material 706, below the channel of NFET 701, is electricallycoupled to point 755A of resistive path 751 in heavily doped P-substrate706B via path 755. Path 755 extends through perforation 790B in heavilydoped perforated buried N-well 770 to heavily doped P-substrate 706B. Asnoted above, horizontal distance 751A separates point 753A from point755A and, according to the invention, the value of distance 751A ispredetermined to provide a resistance within a desired range.

[0179] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 712and point 757 or between well tie 713 and point 758 was to be avoided.As also discussed above, this teaching was adopted in light of the dualdangers of voltage drops due to large impact ionization currents and/orlatch-up. However, as also discussed above, at source/drain (Vds)voltages of less than one volt, impact ionization currents drop off toinsignificant levels (see FIG. 1D) and latch-up can be avoided byoperating at supply voltages of less than 0.8 volt.

[0180] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher dopant concentration, which also tends to lower resistivity inthe vicinity of the channel. Consequently, while it is possible toengineer a resistive path in standard CMOS, it is easier in low power orultra-low power CMOS, because the thresholds are lower and the pathresistivity is naturally higher.

[0181] In some embodiments of the invention, the structures of FIGS. 7A,7B and 7C are low-power or ultra-low power devices where thesource/drain (Vds) voltages, and the supply voltages, are significantlybelow 0.8 volt. In one embodiment of the invention, the supply voltageoperates between 0.2 volt and 0.6 volt, depending on the operatingconditions resulting in source/drain voltages between 0.2 volt and 0.6volt.

[0182] By employing the structures of FIG. 7A, 7B or 7C in a low-poweror ultra-low power environment, the present invention can be utilizedwithout fear of large impact ionization currents, and the associatedvoltage drops across the bulk materials 706 and 711, and without fear oflatch-up or device self destruct, as was the fear in the prior art.

[0183] Devices 700A, 700B and 700C of FIGS. 7A, 7B and 7C include all ofthe advantages of device 300A discussed above in connection with FIGS.3A, 3B, 3C, 3D and 3E. In addition, devices 700A, 700B and 700C do notnecessitate the formation of two buried resistive paths. Instead, onlythe single heavily doped perforated buried N-well 770 is required.Consequently, devices 700A, 700B and 700C represent another economicalimplementation of the present invention.

[0184]FIG. 8 illustrates a resistive path device 800, which includes aN+ plug 813 that forms a well tie 818 according to one embodiment of theinvention. Device 800 includes a PFET 802 that is essentially afour-terminal device. PFET 802 includes P-region source 808, a gateelectrode 809 and a P-region drain 810 formed in an N-well bulk material811. Device 800 of FIG. 8 also includes a N+ plug 813 that forms a welltie 813. In the embodiment of the invention shown in FIG. 8, N+ plug 813sits in a second well bulk material 860.

[0185] Those of skill in the art will recognize that, in FIG. 8, device800 is chosen to include a PFET 802 for illustrative purposes only. Inother embodiments of the invention, FET 802 is an NFET and thepolarities of the corresponding components of device 800 are reversedaccordingly. Consequently, in FIG. 8, PFET 802 was chosen for simplicityand to avoid detracting from the invention by discussing multipleembodiments at the same time.

[0186] In device 800, according to one embodiment of the invention, wellcontact 813 is split off from source 808 of PFET 802 by providing aseparate metallic rail contact 818 that is electrically isolated frommetallic rail contact 815 of source 808. Rail contact 818 is coupled toa bias voltage source Vnw.

[0187] According to the invention, device 800 also includes resistivepath 852. According to one embodiment of the invention, resistive path852 is partly in N+ buried well 806. N+ buried well 806 is positionedwithin P-bulk material 862. In one embodiment of the invention,resistive path 852 includes a horizontal distance 852A, between points854A and 856A in N+ buried well 806, that can be varied to provide thedesired resistance level.

[0188] According to one embodiment of the invention, the N+ plug thatforms well tie 813 is electrically coupled to point 854A of resistivepath 852 through path 854. Likewise, point 858 in N-well bulk material811, below the channel of PFET 802, is electrically coupled to point856A of resistive path 852 through path 856. As noted above, horizontaldistance 852A separates point 854A from point 856A and, according to theinvention, the value of distance 852A is predetermined to provide aresistance within a desired range.

[0189] According to the invention, it is not necessary for theresistivity to be uniform within N+ buried well 806. All that isrequired is that the total resistivity along resistive path 852 liewithin bounds that both enable a transient floating body effect duringturn-on and a return to an equilibrium potential before the next timethe gate switches, as discussed in more detail above.

[0190] As also discussed above, the overall resistance between points854A and 856A, in resistive path 852, can be varied by increasing ordecreasing the horizontal distance 852A in resistive path 852.Therefore, a higher resistance can be achieved by increasing the valueof 852A, or a lower resistance can be achieved by decreasing the valueof 852A.

[0191] As discussed above, in the prior art CMOS devices it wasspecifically taught that providing a resistive path between well tie 813and point 858 was to be avoided. As also discussed above, this teachingwas adopted in light of the dual dangers of voltage drops due to largeimpact ionization currents and/or latch-up. However, as also discussedabove, at source/drain (Vds) voltages of less than one volt, impactionization currents drop off to insignificant levels (see FIG. 1D) andlatch-up can be avoided by operating at supply voltages of less than 0.8volt.

[0192] In addition, standard CMOS devices such as NFET 101 (FIG. 1C)require higher threshold voltages and higher threshold voltages requirea higher dopant concentration, which also tends to lower resistivity inthe vicinity of the channel. Consequently, while it is possible toengineer a resistive path in standard CMOS, it is easier in low power orultra-low power CMOS, because the thresholds are lower and the pathresistivity is naturally higher.

[0193] In one embodiment of the invention, the structure of FIG. 8 is alow-power or ultra-low power device where the source/drain (Vds)voltages, and the supply voltages, are significantly below 0.8 volt. Inone embodiment of the invention, the supply voltage operates between 0.2volt and 0.6 volt, depending on the operating conditions resulting insource/drain voltages between 0.2 volt and 0.6 volt.

[0194] By employing the structure of FIG. 8 in a low-power or ultra-lowpower environment, the present invention can be utilized without fear oflarge impact ionization currents, and the associated voltage dropsacross the bulk materials 406 and 411, and without fear of latch-up ordevice self destruct, as was the fear in the prior art.

[0195] As seen above, in contrast to the structures and teachings of theprior art, the present invention includes a method and structure forproviding low power MOS devices that include wells specifically designedto provide a resistive path between the bulk material of the device anda well tie contact. By providing a resistive path, an equivalent RCcircuit is introduced to the device that allows the bulk materialpotential to track the gate potential, thereby advantageously loweringthe threshold voltage as the device turns on and raising the thresholdvoltage as the device turns off. This gives the devices designedaccording to the invention the positive attributes of prior artpartially depleted SOI devices. However, the introduction of theresistive path, in accordance with the invention, also allows the bulkmaterial potential to be controlled and stabilize at an equilibriumpotential between clock periods. Therefore, devices designed accordingto the principles of the invention do not suffer from the floating bodyeffect associated with prior art partially depleted SOI devices.

[0196] In addition, one embodiment of the devices according to theinvention are designed to be used in a low-power or ultra-low powerenvironment. Consequently, in contrast to prior art CMOS devices, thepresent invention can include resistive wells without the fear of largeimpact ionization current problems and/or latch-up and deviceself-destruct.

[0197] As a result of these and other features discussed in more detailabove, devices designed according to the principles of the presentinvention have the desirable attributes of both prior art CMOS devicesand prior art SOI devices, without the drawbacks of either of theseprior art devices. Consequently, devices designed according to theprinciples of the invention consume less power and can better meet theneeds of modern electronics markets than prior art methods orstructures.

[0198] This Application is related to: U.S. Pat. No. 6,093,951, filedJun. 30, 1997, entitled “MOS DEVICES WITH RETROGRADE POCKET REGIONS”,and naming James B. Burr as inventor; U.S. patent application Ser. No.09/028,472, filed Feb. 24, 1998, entitled “MOS DEVICE STRUCTURE ANDMETHOD FOR REDUCING PN JUNCTION LEAKAGE”, and naming James B. Burr asinventor; U.S. patent application Ser. No. 09/095,550, filed Jun. 11,1998, entitled “TUNABLE THRESHOLD SOI DEVICE USING BACK GATE ANDINTRINSIC CHANNEL REGION”, and naming James B. Burr as inventor; U.S.patent application Ser. No. 09/030,030, filed Feb. 25, 1998, entitled“BACK-BIASED MOS DEVICE AND METHOD”, and naming James B. Burr and JamesE. Murguia as inventors; U.S. patent application Ser. No. 09/693,745,filed Oct. 18, 2000, entitled “TRANSISTOR DEVICE INCLUDING A RESISTIVEWELL” having an Attorney docket number of p-5435, and naming James B.Burr as inventor; U.S. patent application Ser. No. 09/693,715, filedOct. 18, 2000, entitled “METHOD FOR INTRODUCING AN EQUIVALENT RC CIRCUITIN A MOS DEVICE USING RESISTIVE WELLS”, having an Attorney docket numberof P-5627, and naming James B. Burr as inventor; U.S. patent Co-filedapplication Ser. No. 09/xxx,xxx, entitled “METHOD FOR INTRODUCING ANEQUIVALENT RC CIRCUIT IN A MOS DEVICE USING RESISTIVE PATHS”, having anAttorney docket number of P-5648, and naming James B. Burr as inventorall, of which are assigned to the assignee of the present invention andare incorporated herein, in their entirety, by reference for allpurposes.

[0199] The foregoing description of an implementation of the inventionhas been presented for purposes of illustration and description, andtherefore is not exhaustive and does not limit the invention to theprecise form disclosed. Modifications and variations are possible inlight of the above teachings or may be acquired from practicing theinvention.

[0200] For example, for simplicity, the description above is basedlargely on FIG.s showing NFET devices. However, those of skill in theart will readily recognize that, with minor and well-knownmodifications, the invention and discussion above applies equally wellto PFET devices.

[0201] In addition, the discussion above is largely directed to N-wellprocess devices, however, those of skill will recognize that thediscussion above is equally applicable to P-well process devices withminor and well-known modifications.

[0202] In addition, as shown above, one aspect of the invention is tocreate a sufficiently resistive connection between the source of awell's potential and the electrically active bulk region proximate atransistor channel region. This is a natural consequence of distributingthe well potential in a well layer, which is much more resistive than asurface metal layer. However, in another embodiment of the invention, aresistive surface layer, such as lightly doped polysilicon, could beused as well. In another embodiment, multiple resistive surface pathsand/or resistive wells can be used. In one embodiment, at least one ofthe resistive paths and/or wells has an associated resistance thatdiffers from the resistance associated with the other resistive pathsand/or wells.

[0203] Consequently, the scope of the invention is defined by the claimsand their equivalents.

What is claimed is:
 1. A device comprising: a bulk material of a firstconductivity type; source and drain regions positioned within said bulkmaterial and separated by a channel region, said source and drainregions having a second conductivity type; a gate positioned over saidchannel region; and a resistive path in said bulk material, saidresistive path being positioned in said bulk material so as to couple afirst location in said bulk material, below said channel region, to asecond location in said bulk material, said resistive path having ahorizontal length; wherein said horizontal length of said resistive pathis chosen to provide a resistance between said first location and saidsecond location within a specific range of resistance values.
 2. Thedevice of claim 1, further comprising: a well tie of said firstconductivity type positioned within said bulk material, said well tiebeing positioned beside one of said source or drain regions and outsidesaid channel region, wherein; said well tie is electrically coupled tosaid second location in said bulk material.
 3. The device of claim 2,wherein; said well tie is coupled to a first supply voltage and saidsource is coupled to a second supply voltage.
 4. The device of claim 3,wherein; said device is characterized as having an on current and an offcurrent and the ratio of on current to off current in said device is notgreater than about 10⁵.
 5. The device of claim 3, wherein; said devicehas an unbiased threshold voltage of between about −150 millivolts and+150 millivolts.
 6. A device comprising: a bulk material of a P-typeconductivity; source and drain regions positioned within said bulkmaterial and separated by a channel region, said source and drainregions having an N-type conductivity; a gate positioned over saidchannel region; and a resistive path in said bulk material, saidresistive path being positioned in said bulk material so as to couple afirst location in said bulk material, below said channel region, to asecond location in said bulk material, said resistive path having ahorizontal length, wherein; said horizontal length of said resistivepath is chosen to provide a resistance between said first location andsaid second location within a specific range of resistance values. 7.The device of claim 6, further comprising: a well tie positioned withinsaid bulk material, said well tie having a P-type conductivity and beingpositioned beside one of said source or drain regions and outside saidchannel region, wherein; said well tie is electrically coupled to saidsecond location in said bulk material.
 8. The device of claim 7,wherein; said well tie is coupled to a first supply voltage and saidsource is coupled to a second supply voltage.
 9. The device of claim 8,wherein; said first supply voltage is a bias voltage Vpw and said secondsupply voltage is ground.
 10. The device of claim 6, wherein; saiddevice is characterized as having an on current and an off current andthe ratio of on current to off current in said device is not greaterthan about 10⁵.
 11. The device of claim 6, wherein; said device has anunbiased threshold voltage of between about −150 millivolts and +150millivolts.
 12. A device comprising: a bulk material of a N-typeconductivity; source and drain regions positioned within said bulkmaterial and separated by a channel region, said source and drainregions having a P-type conductivity; a gate positioned over saidchannel region; and a resistive path in said bulk material, saidresistive path being positioned in said bulk material so as to couple afirst location in said bulk material, below said channel region, to asecond location in said bulk material, said resistive path having ahorizontal length, wherein; said horizontal length of said resistivepath is chosen to provide a resistance between said first location andsaid second location within a specific range of resistance values. 13.The device of claim 12, further comprising: a well tie positioned withinsaid bulk material, said well tie having a N-type conductivity and beingpositioned beside one of said source or drain regions and outside saidchannel region, wherein; said well tie is electrically coupled to saidsecond location in said resistive path.
 14. The device of claim 13,wherein; said well tie is coupled to a first supply voltage and saidsource is coupled to a second supply voltage.
 15. The device of claim14, wherein; said first supply voltage is a bias voltage Vnw and saidsecond supply voltage is Vdd.
 16. The device of claim 12, wherein; saiddevice is characterized as having an on current and an off current andthe ratio of on current to off current in said device is not greaterthan about 10⁵.
 17. The device of claim 12, wherein; said device has anunbiased threshold voltage of between about −150 millivolts and +150millivolts.
 18. A device comprising: a bulk material of a firstconductivity type; source and drain regions positioned within said bulkmaterial and separated by a channel region, said source and drainregions having a second conductivity type, said source being coupled toa second supply voltage; a gate positioned over said channel region; aresistive path in said bulk material, said resistive path beingpositioned in said bulk material so as to couple a first location insaid bulk material, below said channel region, to a second location insaid bulk material, said resistive path having a horizontal length; anda well tie of said first conductivity type positioned within said bulkmaterial, said well tie being positioned beside one of said source ordrain regions and outside said channel region, said well tie beingelectrically coupled to said second location in said bulk material, saidwell tie being coupled to a first supply voltage, wherein; saidhorizontal length of said resistive path is chosen to provide aresistance between said first location and said second location within aspecific range of resistance values, further wherein; said device ischaracterized as having an on current and an off current and the ratioof on current to off current in said device is not greater than about10⁵, further wherein; said device has an unbiased threshold voltage ofbetween about −150 millivolts and +150 millivolts.
 19. A devicecomprising: a substrate having a first dopant concentration of a firstconductivity type; an epitaxial layer formed on said substrate, saidepitaxial layer having a second dopant concentration of said firstconductivity type; source and drain regions positioned within saidepitaxial layer and separated by a channel region, said source and drainregions having a second conductivity type; a gate positioned over saidchannel region; and a resistive path, said resistive path beingpositioned in said epitaxial layer and said substrate so as to couple afirst location in said epitaxial layer, below said channel region, to asecond location in said epitaxial layer, said resistive path having ahorizontal length in said substrate, wherein; said horizontal length ofsaid resistive path is chosen to provide a resistance between said firstlocation and said second location in said epitaxial layer within aspecific range of resistance values.
 20. The device of claim 19,wherein; said first dopant concentration is greater than said seconddopant concentration.
 21. The device of claim 20, further comprising: awell tie of said first conductivity type positioned within saidepitaxial layer, said well tie being positioned beside one of saidsource or drain regions and outside said channel region, wherein; saidwell tie is electrically coupled to said second location in saidepitaxial layer.
 22. The device of claim 21, wherein; said well tie iscoupled to a first supply voltage and said source is coupled to a secondsupply voltage.
 23. The device of claim 22, wherein; said device ischaracterized as having an on current and an off current and the ratioof on current to off current in said device is not greater than about10⁵.
 24. The device of claim 22, wherein; said device has an unbiasedthreshold voltage of between about −150 millivolts and +150 millivolts.25. A device comprising: a substrate having a first dopant concentrationof a first conductivity type; an epitaxial layer formed on saidsubstrate, said epitaxial layer having a second dopant concentration ofsaid first conductivity type; source and drain regions positioned withinsaid epitaxial layer and separated by a channel region, said source anddrain regions having a second conductivity type; a gale positioned oversaid channel region; a resistive path, said resistive path beingpositioned in said epitaxial layer and said substrate so as to couple afirst location in said epitaxial layer, below said channel region, to asecond location in said epitaxial layer, said resistive path having ahorizontal length in said substrate; and a well tie of said firstconductivity type positioned within said bulk material, said well tiebeing positioned beside one of said source or drain regions and outsidesaid channel region, said well tie being electrically coupled to saidsecond location in said bulk material, said well tie being coupled to afirst supply voltage, wherein; said horizontal length of said resistivepath is chosen to provide a resistance between said first location andsaid second location in said epitaxial layer within a specific range ofresistance values, further wherein; said device is characterized ashaving an on current and an off current and the ratio of on current tooff current in said device is not greater than about 10⁵, furtherwherein; said device has an unbiased threshold voltage of between about−150 millivolts and +150 millivolts.
 26. A device comprising: asubstrate of a first conductivity type; a surface well having a firstdopant concentration of a second conductivity type formed in saidsubstrate; source and drain regions positioned within said surface welland separated by a channel region, said source and drain regions havingsaid first conductivity type; a gate positioned over said channelregion; a buried well having a second dopant concentration of saidsecond conductivity type, said buried well being positioned in saidsubstrate, below said surface well; and a resistive path, said resistivepath being positioned so as to couple a first location in said surfacewell, below said channel region, to a second location in said surfacewell, said resistive path having a horizontal length in said buriedwell, wherein; said horizontal length of said resistive path in saidburied well is chosen to provide a resistance between said firstlocation and said second location in said surface well within a specificrange of resistance values.
 27. The device of claim 26, wherein; saidfirst dopant concentration is less than said second dopantconcentration.
 28. The device of claim 27, further comprising: a welltie of said first conductivity type positioned within said surface well,said well tie being positioned beside one of said source or drainregions and outside said channel region, wherein; said well tie iselectrically coupled said second location in said surface well.
 29. Thedevice of claim 28, wherein; said well tie is coupled to a first supplyvoltage and said source is coupled to a second supply voltage.
 30. Thedevice of claim 29, wherein; said device is characterized as having anon current and an off current and the ratio of on current to off currentin said device is not greater than about 10⁵.
 31. The device of claim29, wherein; said device has an unbiased threshold voltage of betweenabout −150 millivolts and +150 millivolts.
 32. A device comprising: asubstrate of a first conductivity type; a surface well having a firstdopant concentration of a second conductivity type formed in saidsubstrate; source and drain regions positioned within said surface welland separated by a channel region, said source and drain regions havingsaid first conductivity type; a gate positioned over said channelregion; a buried well having a second dopant concentration of saidsecond conductivity type, said buried well being positioned in saidsubstrate, below said surface well; a resistive path, said resistivepath being positioned so as to couple a first location in said surfacewell, below said channel region, to a second location in said surfacewell, said resistive path having a horizontal length in said buriedwell; and a well tie of said first conductivity type positioned withinsaid surface well, said well tie being positioned beside one of saidsource or drain regions and outside said channel region, said well tiebeing electrically coupled to said second location in said surface well,said well tie being coupled to a first supply voltage, wherein; saidhorizontal length of said resistive path in said buried well is chosento provide a resistance between said first location and said secondlocation in said surface well within a specific range of resistancevalues, further wherein; said device is characterized as having an oncurrent and an off current and the ratio of on current to off current insaid device is not greater than about 10⁵, further wherein; said devicehas a threshold voltage of between about −150 millivolts and +150millivolts.
 33. A device comprising: a substrate having a first dopantconcentration of a first conductivity type; a layer formed on saidsubstrate, said layer having a second dopant concentration of said firstconductivity type; source and drain regions positioned within said layerand separated by a channel region, said source and drain regions havinga second conductivity type; a gate positioned over said channel region;a buried well having a second dopant concentration of said secondconductivity type, said buried well being positioned between saidsubstrate and said layer, said buried well having a perforation; and aresistive path, said resistive path being positioned in said layer andsaid substrate so as to couple a first location in said layer, belowsaid channel region, to a second location in said layer, said resistivepath having a horizontal length in said substrate that is coupled tosaid first and second locations in said layer through said perforationin said buried well, wherein; said horizontal length of said resistivepath in said substrate is chosen to provide a resistance between saidfirst location and said second location in said layer within a specificrange of resistance values.
 34. The device of claim 33, wherein; saidfirst dopant concentration is greater than said second dopantconcentration.
 35. The device of claim 34, further comprising: a welltie of said first conductivity type positioned within said layer, saidwell tie being positioned beside one of said source or drain regions andoutside said channel region, wherein; said well tie is electricallycoupled to said second location in said layer.
 36. The device of claim35, wherein; said well tie is coupled to a first supply voltage and saidsource is coupled to a second supply voltage.
 37. The device of claim36, wherein; said device is characterized as having an on current and anoff current and the ratio of on current to off current in said device isnot greater than about 10⁵.
 38. The device of claim 36, wherein; saiddevice has an unbiased threshold voltage of between about −150millivolts and +150 millivolts.
 39. A device comprising: a substratehaving a first dopant concentration of a first conductivity type; alayer formed on said substrate, said layer having a second dopantconcentration of said first conductivity type; source and drain regionspositioned within said layer and separated by a channel region, saidsource and drain regions having a second conductivity type, said sourcebeing coupled to a second supply voltage; a gate positioned over saidchannel region; a buried well having a second dopant concentration ofsaid second conductivity type, said buried well being positioned betweensaid substrate and said layer, said buried well having a perforation; awell tie of said first conductivity type positioned within said layer,said well tie being positioned beside one of said source or drainregions and outside said channel region, said well tie beingelectrically coupled to said second location in said layer, said welltie being coupled to a first supply voltage; and a resistive path, saidresistive path being positioned in said layer and said substrate so asto couple a first location in said layer, below said channel region, toa second location in said layer, said resistive path having a horizontallength in said substrate that is coupled to said first and secondlocations in said layer through said perforation in said buried well,wherein; said horizontal length of said resistive path in said substrateis chosen to provide a resistance between said first location and saidsecond location in said layer within a specific range of resistancevalues, further wherein; said device is characterized as having an oncurrent and an off current and the ratio of on current to off current insaid device is not greater than about 10⁵, further wherein; said devicehas an unbiased threshold voltage of between about −150 millivolts and+150 millivolts.
 40. A structure comprising: a substrate having a firstdopant concentration of a first conductivity type; a layer formed onsaid substrate, said layer having a second dopant concentration of saidfirst conductivity type; a surface well having a first dopantconcentration of a second conductivity type formed in said layer; afirst transistor having source and drain regions positioned within saidlayer and separated by a channel region, said source and drain regionshaving a second conductivity type, and a gate positioned over saidchannel region; a second transistor having source and drain regionspositioned within said surface well and separated by a channel region,said source and drain regions having said first conductivity type, and agate positioned over said channel region; a buried well having a seconddopant concentration of said second conductivity type, said buried wellbeing positioned between said substrate and said layer, said buried wellhaving a perforation; a first resistive path, said first resistive pathbeing positioned in said layer and said substrate so as to couple afirst location in said layer, below said channel region of said firsttransistor, to a second location in said layer, said first resistivepath having a horizontal length in said substrate that is coupled tosaid first and second locations in said layer through said perforationin said buried well, wherein; said horizontal length of said firstresistive path in said substrate is chosen to provide a resistancebetween said first location and said second location in said layerwithin a specific range of resistance values; and a second resistivepath, said second resistive path being positioned so as to couple afirst location in said surface well, below said channel region of saidsecond transistor, to a second location in said surface well, saidsecond resistive path having a horizontal length in said buried well,wherein; said horizontal length of said second resistive path in saidburied well is chosen to provide a resistance between said firstlocation and said second location in said surface well within a specificrange of resistance values.
 41. The structure of claim 40, wherein; saidfirst transistor and said second transistor are characterized as havingan on current and an off current and the ratio of on current to offcurrent in at least one of said first transistor and said secondtransistor is not greater than about 10⁵.
 42. The structure of claim 40,wherein; at least one of said first transistor and said secondtransistor has an unbiased threshold voltage of between about −150millivolts and +150 millivolts.
 43. A structure comprising: a substratehaving a first dopant concentration of a first conductivity type; alayer formed on said substrate, said layer having a second dopantconcentration of said first conductivity type; a surface well having afirst dopant concentration of a second conductivity type formed in saidlayer; a first transistor having source and drain regions positionedwithin said layer and separated by a channel region, said source anddrain regions having a second conductivity type, and a gate positionedover said channel region; a second transistor having source and drainregions positioned within said surface well and separated by a channelregion, said source and drain regions having said first conductivitytype, and a gate positioned over said channel region; a buried wellhaving a second dopant concentration of said second conductivity type,said buried well being positioned between said substrate and said layer,said buried well having a perforation; a first resistive path, saidfirst resistive path being positioned in said layer and said substrateso as to couple a first location in said layer, below said channelregion of said first transistor, to a second location in said layer,said first resistive path having a horizontal length in said substratethat is coupled to said first and second locations in said layer throughsaid perforation in said buried well, wherein; said horizontal length ofsaid first resistive path in said substrate is chosen to provide aresistance between said first location and said second location in saidlayer within a specific range of resistance values; and a secondresistive path, said second resistive path being positioned so as tocouple a first location in said surface well, below said channel regionof said second transistor, to a second location in said surface well,said second resistive path having a horizontal length in said buriedwell, wherein; said horizontal length of said second resistive path insaid buried well is chosen to provide a resistance between said firstlocation and said second location in said surface well within a specificrange of resistance values, further wherein; said first transistor andsaid second transistor are characterized as having an on current and anoff current and the ratio of on current to off current in at least oneof said first transistor and said second transistor is not greater thanabout 10⁵, further wherein; at least one of said first transistor andsaid second transistor has an unbiased threshold voltage of betweenabout −150 millivolts and +150 millivolts.